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En 10088 2 Pdf Download


10088-2.pdf or view the free online book. Oct 30, 2017 English Version... The steel grades, the section of the duplex steel, and the physical



En 10088 2 pdf download









En 10088 2 pdf download


Category:Corrosion prevention Category:Corrosion prevention technology1. Field of the Invention The present invention relates to a method and apparatus for forming a semiconductor device using semiconductor devices as an ion source and ion implantation apparatus used therein. 2. Description of the Related Art The ion implantation apparatus of the related art includes a chamber having a reaction gas supply source, an ion source, a collimator, an analyzer, a shutter, a mass analyzer, and a substrate holding portion for holding a substrate. In the chamber, a substrate as a sample is held on a substrate table and a high-velocity ion beam is supplied from the ion source to the substrate to ion-implant the substrate. The ion beam is collimated by the collimator, the ion beam is attenuated by the analyzer, the ion beam is mass-analyzed by the mass analyzer, and then the ion beam is supplied to the substrate. To form a gate insulating film of a MOS transistor, an impurity-doped polysilicon is used as a material for the gate electrode and the silicon substrate is subjected to an ion implantation using the impurity-doped polysilicon as an ion source (impurity ion is implanted), so that the gate insulating film is formed. The film thickness of the gate insulating film can be controlled by controlling the dose of the impurity ion to be implanted (dose of the impurity ion is controlled) (e.g., see Japanese Unexamined Patent Application Publication No. H9-84190). Recently, a gate electrode is formed by using a metal that is hard to react with a silicon substrate, such as a refractory metal, for example, titanium, and is directly deposited on the gate insulating film. The refractory metal layer is formed by sputtering. A plasma process using a plasma is generally performed during a manufacturing process of a semiconductor device. The plasma process is, for example, used to perform etching of a silicon substrate or to perform ion implantation using an impurity ion. If a refractory metal is deposited on a silicon substrate by the sputtering method, however, the refractory metal is not sufficiently deposited. Accordingly, the surface of the silicon substrate is roughened and the surface of the silicon substrate cannot be sufficiently flat. As a result, a problem occurs in that the refractory metal layer is delam









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En 10088 2 Pdf Download

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